q?v~zy??q?v?_rb]q~???qcabeq HFA11N90 3 2 1 bv dss = 900 v r ds(on) typ
i d = 11 a thermal resistance characteristics features absolute maximum ratings t c =25 e unless otherwise specified HFA11N90 900v n-channel mosfet symbol parameter typ. max. units r jc junction-to-case -- 1.04 e /w r ja junction-to-ambient -- 40 march 2014 to-247 1.gate 2. drain 3. source ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 75 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested symbol parameter value units v dss drain-source voltage 900 v i d drain current ? continuous (t c = 25 e ) 11.0 a drain current ? continuous (t c = 100 e ) 6.9 a i dm drain current ? pulsed (note 1) 44 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 960 mj i ar avalanche current (note 1) 11 a e ar repetitive avalanche energy (note 1) 12 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 120 w 0.96 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e
q?v~zy??q?v?_rb]q~???qcabeq HFA11N90 notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=15mh, i as =11.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |